AON6278 N-Channel MOSFET Datasheet
80V N-Channel MOSFET
Alpha & Omega Semiconductors
|Total Page||6 Pages|
80V N-Channel MOSFET
The AON6278 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100% UIS Tested
100% Rg Tested
Absolute Maximum Ratings TA=25°C unless otherwise noted
Continuous Drain TC=25°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
Power Dissipation B TC=100°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
-55 to 150
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
Rev.2.0: March 2014
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Continuous Current G
3.5 4.6 mΩ
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=40V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
0.3 0.65 1.0
Qg(10V) Total Gate Charge
61.5 86 nC
Qgs Gate Source Charge
VGS=10V, VDS=40V, ID=20A
Qgd Gate Drain Charge
Turn-On Rise Time
VGS=10V, VDS=40V, RL=2Ω,
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: March 2014
Page 2 of 6
|Features||AON6278 80V N-Channel MOSFET General De scription Product Summary The AON6278 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching perf ormance. Both conduction and switching power losses are minimized due to an ex tremely low combination of RDS(ON), Cis s and Coss. This device is ideal for bo ost converters and synchronous rectifie rs for consumer, telecom, industrial po wer supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) R DS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested 80V 85A < 3.3mΩ < 4.6mΩ Top View DFN5X6 Bottom View PIN1 T op View 18 27 36 45 G Absolute Maximu m Ratings TA=25°C unless otherwise not ed Parameter Symbol Drain-Source Vol tage VDS Gate-Source Voltage VGS Co ntinuous Drain TC=25°C Current G TC= 100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current T A=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS EAS TC=25°C Power Dissipation B TC=100°C P.|
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