AON6276 N-Channel MOSFET Datasheet

AON6276 Datasheet, PDF, Equivalent


Part Number

AON6276

Description

80V N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AON6276 Datasheet


AON6276
AON6276
80V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
• Low Eoss
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
80V
100A
< 2.6mΩ
< 3.5mΩ
Applications
• Secondary Synchronous Rectification MOSFET for Server
and Telecom
100% UIS Tested
100% Rg Tested
Top View
DFN5x6
Bottom View
PIN1
Orderable Part Number
AON6276
PIN1
Package Type
DFN 5x6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH
C
VGS
ID
IDM
IDSM
IAS
EAS
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Top View
18
27
36
45
Form
Tape & Reel
D
G
S
Minimum Order Quantity
3000
Maximum
80
±20
100
100
355
38.5
31
73
266
96
215
86
7.3
4.7
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Typ
14
40
0.43
Max
17
50
0.58
Units
°C/W
°C/W
°C/W
Rev.1.0: October 2016
www.aosmd.com
Page 1 of 6

AON6276
AON6276
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=80V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=6V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=40V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=40V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=40V, RL=2.0,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
Min
80
2.1
0.3
Typ
2.6
2.2
3.7
2.8
100
0.68
4940
770
40
0.7
68
14.5
14
14
8.5
40
10
32
168
Max Units
1
5
±100
3.2
2.6
4.5
3.5
1
100
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
1.2 Ω
100 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2016
www.aosmd.com
Page 2 of 6


Features AON6276 80V N-Channel AlphaSGT TM Gener al Description • Trench Power AlphaSG TTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss Product Summa ry VDS ID (at VGS=10V) RDS(ON) (at VGS= 10V) RDS(ON) (at VGS=6V) 80V 100A < 2. 6mΩ < 3.5mΩ Applications • Secon dary Synchronous Rectification MOSFET f or Server and Telecom 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 Orderable Part Number AON62 76 PIN1 Package Type DFN 5x6 Absolute Maximum Ratings TA=25°C unless otherw ise noted Parameter Symbol Drain-Sou rce Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G T C=100°C Pulsed Drain Current C Conti nuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L =0.1mH C VGS ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25 °C TC=100°C VSPIKE PD TA=25°C Powe r Dissipation A TA=70°C PDSM Junctio n and Storage Temperature Range TJ, TS TG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to.
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