DatasheetsPDF.com

UTG25N120

UTC
Part Number UTG25N120
Manufacturer UTC
Description 1200V NPT IGBT
Published Apr 20, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UTG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESC...
Datasheet PDF File UTG25N120 PDF File

UTG25N120
UTG25N120

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UTG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESCRIPTION The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar Transistor.
it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc.
The UTC UTG25N120 is suitable for the resonant or soft switching applications.
 FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =2.
0V @ IC=25A and TC =25°C * Low switching loss: Eoff, typ=0.
96mJ @ IC=25A and TC=25°C  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)