N-Channel MOSFET. Si4416DY Datasheet

Si4416DY MOSFET. Datasheet pdf. Equivalent

Si4416DY Datasheet
Recommendation Si4416DY Datasheet
Part Si4416DY
Description N-Channel MOSFET
Feature Si4416DY; N-Channel 30-V (D-S) MOSFET Si4416DY Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0.
Manufacture Vishay
Datasheet
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Vishay Si4416DY
N-Channel 30-V (D-S) MOSFET
Si4416DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.018 @ VGS = 10 V
0.028 @ VGS = 4.5 V
ID (A)
9.0
7.3
FEATURES
D TrenchFETr Power MOSFET
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4416DY
Si4416DY-T1 (with Tape and Reel)
D
G
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
9.0 6.9
7.5 5.6
50
2.1 1.2
2.5 1.4
1.6 0.9
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady-State
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72266
S-31062—Rev. E, 26-May-03
Symbol
RthJA
RthJF
Typ
40
72
16
Max
50
90
20
Unit
_C/W
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Vishay Si4416DY
Si4416DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 9.0 A
VGS = 4.5 V, ID = 7.3 A
VDS = 15 V, ID = 9.0 A
IS = 2.1 A, VGS = 0 V
1
20
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgt
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
VDS = 15 V, VGS = 5 V, ID = 9.0 A
VDS = 15 V, VGS = 10 V, ID = 9.0 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.1 A, di/dt = 100 A/ms
0.2
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Typa Max Unit
"100
1
25
0.012
0.019
23
0.018
0.028
1.2
V
nA
mA
A
W
S
V
14 20
24 35
nC
4.5
5.9
1.0 2.4 W
16 20
10 20
34 50 ns
13 20
50 90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 10 thru 5 V
40
4V
30
20
10
0
0
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2
3V
1234
VDS - Drain-to-Source Voltage (V)
5
Transfer Characteristics
50
40
30
20
10
0
0
TC = 125_C
25_C
- 55_C
1234
VGS - Gate-to-Source Voltage (V)
5
Document Number: 72266
S-31062—Rev. E, 26-May-03



Vishay Si4416DY
Si4416DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
1800
Capacitance
0.08
0.06
0.04
0.02
VGS = 4.5 V
VGS = 10 V
0.00
0
10 20 30 40
ID - Drain Current (A)
50
Gate Charge
10
VDS = 15 V
8 ID = 9 A
1500
1200
Ciss
900
600
300
0
0
Crss
5
Coss
10 15 20 25
VDS - Drain-to-Source Voltage (V)
30
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
1.4 ID = 9 A
6 1.2
4 1.0
2 0.8
0
0 5 10 15 20 25
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
TJ = 150_C
10
TJ = 25_C
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
ID = 9 A
0.04
0.02
1
0.00
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Document Number: 72266
S-31062—Rev. E, 26-May-03
0.00
0
2468
VGS - Gate-to-Source Voltage (V)
10
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