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AFV10700H Datasheet, Equivalent, LDMOS Transistors.

RF Power LDMOS Transistors

RF Power LDMOS Transistors

 

 

 

Part AFV10700H
Description RF Power LDMOS Transistors
Feature NXP Semiconductors Technical Data RF Po wer LDMOS Transistors N--Channel Enhanc ement--Mode Lateral MOSFETs These RF p ower transistors are designed for pulse applications operating at 960 to 1215 MHz.
These devices are suitable for use in defense and commercial pulse applic ations with large duty cycles and long pulses, such as IFF, secondary surveill ance radars, ADS--B transponders, DME a nd other complex pulse chains.
Typical Performance: In 1030–1090 MHz refere nce circuit, IDQ(A+B) = 100 mA Frequen cy (MHz) (1) Signal Type VDD Pout G ps D (V) (W) (dB) (%) 1030 109 0 1030 1090 Pulse .
Manufacture NXP
Datasheet
Download AFV10700H Datasheet
Part AFV10700H
Description RF Power LDMOS Transistors
Feature NXP Semiconductors Technical Data RF Po wer LDMOS Transistors N--Channel Enhanc ement--Mode Lateral MOSFETs These RF p ower transistors are designed for pulse applications operating at 960 to 1215 MHz.
These devices are suitable for use in defense and commercial pulse applic ations with large duty cycles and long pulses, such as IFF, secondary surveill ance radars, ADS--B transponders, DME a nd other complex pulse chains.
Typical Performance: In 1030–1090 MHz refere nce circuit, IDQ(A+B) = 100 mA Frequen cy (MHz) (1) Signal Type VDD Pout G ps D (V) (W) (dB) (%) 1030 109 0 1030 1090 Pulse .
Manufacture NXP
Datasheet
Download AFV10700H Datasheet

AFV10700H

AFV10700H
AFV10700H

AFV10700H

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