P-Channel MOSFET. SUD45P04-16P Datasheet

SUD45P04-16P MOSFET. Datasheet pdf. Equivalent

SUD45P04-16P Datasheet
Recommendation SUD45P04-16P Datasheet
Part SUD45P04-16P
Description P-Channel MOSFET
Feature SUD45P04-16P; P-Channel 40 V (D-S) MOSFET SUD45P04-16P Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Ma.
Manufacture Vishay
Datasheet
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Vishay SUD45P04-16P
P-Channel 40 V (D-S) MOSFET
SUD45P04-16P
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.0162 at VGS = - 10 V
- 40
0.0230 at VGS = - 4.5 V
ID (A)
- 36
- 24
Qg (Typ.)
67
TO-252
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD45P04-16P-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters
S
G
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current (t = 300 µs)
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 40
± 20
- 36
- 29
- 100
- 32
51
41.7b
2.1
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Symbol
RthJA
RthJC
Limit
60
3
Unit
°C/W
Document Number: 63372
www.vishay.com
S11-1657-Rev. A, 15-Aug-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SUD45P04-16P
SUD45P04-16P
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = - 40 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 40 V, VGS = 0 V, TJ = 125 °C
VDS = - 40 V, VGS = 0 V, TJ = 150 °C
On-State Drain Currenta
ID(on)
VDS - 10 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 14 A
VGS = - 4.5 V, ID = - 12 A
Forward Transconductancea
gfs VDS = - 20 V, ID = - 14 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = - 20 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = - 20 V, VGS = - 10 V, ID = - 14 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = - 20 V, RL = 2
ID - 10 A, VGEN = - 10 V, Rg = 1
Fall Timec
tf
Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD IF = - 10 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = - 10 A, dI/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
- 40
-1
- 50
0.5
Typ.
Max.
- 2.5
± 250
-1
- 50
- 250
0.0135
0.0190
40
0.0162
0.0230
2765
330
280
67
13.5
14
2.5
10
11
42
12
100
5
20
20
63
20
- 0.8
38
2.3
40
- 36
- 100
- 1.5
57
3.5
60
Unit
V
nA
µA
A
S
pF
nC
ns
A
V
ns
A
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 63372
2 S11-1657-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SUD45P04-16P
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUD45P04-16P
Vishay Siliconix
40 0.030
VGS = 10 V thru 4 V
0.025
30
0.020
VGS = 4.5 V
20
0.015
VGS = 10 V
10
VGS = 3 V
0.010
0
0 0.5 1 1.5 2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.005
0
20 40 60
ID - Drain Current (A)
80
On-Resistance vs. Drain Current
100
1.0 0.040
ID = 14 A
0.8 0.034
0.6
TC = 25 °C
0.4
0.028
0.022
TJ = 125 °C
0.2
0
0
50
40
30
20
10
TC = 125 °C
TC = - 55 °C
0.7 1.4 2.1 2.8
VGS - Gate-to-Source Voltage (V)
3.5
Transfer Characteristics
TC = - 55 °C TC = 25 °C
TC = 125 °C
0.016
TJ = 25 °C
0.010
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
ID = 14 A
8
VDS = 20 V
6
VDS = 10 V
4 VDS = 32 V
2
0
0 6 12 18 24 30
ID - Drain Current (A)
Transconductance
0
0 14 28 42 56 70
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63372
www.vishay.com
S11-1657-Rev. A, 15-Aug-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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