DatasheetsPDF.com

STG35M120F3D7

STMicroelectronics

IGBT


Description
STG35M120F3D7 Datasheet 1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing C G Features 10 μs of short-circuit withstand time Low VCE(sat) = 1.85 V (typ.) @ IC = 35 A Positive VCE(sat) temperature coefficient Tight parameter distribution Maximum junction temperature: TJ = 175 °C Applications Motor control E Ind...



STMicroelectronics

STG35M120F3D7

File Download Download STG35M120F3D7 Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)