MOSFET. AOD609G Datasheet

AOD609G MOSFET. Datasheet pdf. Equivalent

Part AOD609G
Description MOSFET
Feature AOD609G Complementary Enhancement Mode Field Effect Transistor General Description The AOD609G uses.
Manufacture Alpha & Omega Semiconductors
Total Page 12 Pages
Datasheet
Download AOD609G Datasheet



AOD609G
AOD609G
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOD609G uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may
be used in H-bridge, Inverters and other
applications.
-RoHS Compliant
-Halogen Free*
Features
n-channel
VDS (V) = 40V, ID = 12A (VGS=10V)
RDS(ON)< 30mW (VGS=10V)
RDS(ON)< 40mW (VGS=4.5V)
p-channel
VDS (V) = -40V, ID = -12A (VGS=-10V)
RDS(ON)< 45mW (VGS= -10V)
RDS(ON)< 66mW (VGS= -4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
TO-252-4L
D-PAK
D1/D2
Bottom View
Top View
Drain Connected
to Tab
D1/D2
G2
S2
G1
S1
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain TC=25°C
Current B,H
TC=100°C
Pulsed Drain Current B
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
12
12
30
14
9.8
Power Dissipation
TC=25°C
TC=100°C
PD
27
14
Power Dissipation
TA=25°C
TA=70°C
PDSM
2
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Max p-channel
-40
±20
-12
-12
-30
-20
20
30
15
2
1.3
-55 to 175
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Ambient A,D
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Ambient A,D
Steady-State
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RqJA
RqJC
RqJA
RqJC
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
17.4
50
4
16.7
50
3.5
Max
25
60
5.5
25
60
5
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Rev 1.0: May 2018
www.aosmd.com
Page 1 of 9



AOD609G
AOD609G
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250mA, VGS=0V
VDS=40V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250mA
VGS=10V, VDS=5V
VGS=10V, ID=12A
Static Drain-Source On-Resistance
VGS=4.5V, ID=8A
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=12A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
VGS=10V, VDS=20V,
ID=12A
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=1.4W,
RGEN=3W
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/ms
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/ms
Min
40
1.7
30
1.6
Typ Max Units
V
1
mA
5
±100 nA
2.5 3
V
A
24 30
37 46 mW
31 40
25 S
0.76 1
V
2A
545
65
40
3.2 4.8
pF
pF
pF
W
10 13 nC
2 nC
2.2 nC
5.5 ns
3 ns
19 ns
4 ns
13 ns
6.5 nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using the steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: Aug 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1.0: May 2018
www.aosmd.com
Page 2 of 9





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