Power Transistor. EPC2038 Datasheet

EPC2038 Transistor. Datasheet pdf. Equivalent

Part EPC2038
Description Power Transistor
Feature eGaN® FET DATASHEET EPC2038 – Enhancement Mode Power Transistor with Integrated Reverse Gate Clamp .
Manufacture EPC
Datasheet
Download EPC2038 Datasheet



EPC2038
eGaN® FET DATASHEET
EPC2038 – Enhancement Mode Power Transistor
with Integrated Reverse Gate Clamp Diode
VDS , 100 V
RDS(on) , 3300 m
ID , 0.5 A
D
G
S
EPC2038
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VALUE
VDS
Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
100
120
ID
Continuous (TA = 25°C, RθJA = 100°C/W)
Pulsed (25°C, TPULSE = 300 µs)
VGS Gate-to-Source Voltage
TJ Operating Temperature
TSTG Storage Temperature
0.5
0.5
6
-40 to 150
-40 to 150
UNIT
V
A
V
°C
Thermal Characteristics
PARAMETER
TYP UNIT
RθJC Thermal Resistance, Junction-to-Case
27
RθJB Thermal Resistance, Junction-to-Board
91 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
100
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
BVDSS
IDSS
IGSS
VF
VGS(TH)
RDS(on)
VSD
Drain-to-Source Voltage
Drain-Source Leakage
Gate-to-Source Forward Leakage
Gate-to-Source Forward Leakage#
Source-Gate Forward Voltage
Gate Threshold Voltage
Drain-Source On Resistance
Source-Drain Forward Voltage
VGS = 0 V, ID = 125 μA
VDS = 80 V, VGS = 0 V
VGS = 5 V, TJ = 25˚C
VGS = 5 V, TJ = 125˚C
IF = 0.2 mA, VDS = 0 V
VDS = VGS, ID = 0.1 mA
VGS = 5 V, ID = 0.05 A
IS = 0.1 A, VGS = 0 V
All measurements were done with substrate connected to source.
# Defined by design. Not subject to production test.
EPC2038 eGaN® FETs are supplied only in
passivated die form with solder bumps.
Die size: 0.9 mm x 0.9 mm
Applications
Synchronous Bootstrap for:
• High Speed DC-DC Conversion
• Wireless Power Transfer
• High Frequency Hard-Switching and
Soft-Switching Circuits
• Lidar/Pulsed Power Applications
• Class-D Audio
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra Low QG
• Ultra Small Footprint
MIN TYP
100
20
0.0001
0.002
0.8 1.7
2100
2.9
MAX
100
0.5
1
2.7
2.5
3300
UNIT
V
μA
mA
V
V
V
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
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EPC2038
eGaN® FET DATASHEET
PARAMETER
Dynamic Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
CISS Input Capacitance
CRSS Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V
COSS
COSS(ER)
COSS(TR)
Output Capacitance
Effective Output Capacitance, Energy Related (Note 2)
Effective Output Capacitance, Time Related (Note 3)
VDS = 0 to 50 V, VGS = 0 V
RG Gate Resistance
QG Total Gate Charge
VDS = 50 V, VGS = 5 V, ID = 0.05 A
QGS Gate-to-Source Charge
QGD Gate-to-Drain Charge
VDS = 50 V, ID = 0.05 A
QG(TH)
Gate Charge at Threshold
QOSS
Output Charge
VDS = 50 V, VGS = 0 V
QRR Source-Drain Recovery Charge
All measurements were done with substrate connected to source.
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.
Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
MIN
TYP
7
0.02
1.6
2.2
2.7
4.8
44
20
4
18
134
0
Figure 1: Typical Output Characteristics at 25°C
0.5
Figure 2: Transfer Characteristics
0.5
EPC2038
MAX UNIT
8.4
2.4 pF
Ω
pC
0.4 0.4 25˚C
VGS = 5 V
125˚C
0.3
VGS = 4 V
VGS = 3 V
0.3 VDS = 3 V
VGS = 2 V
0.2 0.2
0.1 0.1
0 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS – Drain-to-Source Voltage (V)
Figure 3: RDS(on) vs. VGS for Various Drain Currents
8000
ID = 0.05 A
6000
ID = 0.10 A
ID = 0.15 A
ID = 0.20 A
4000
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
Figure 4: RDS(on) vs. VGS for Various Temperatures
8000
25˚C
6000 125˚C
ID = 0.05 A
4000
2000 2000
02.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
0 2.5
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
3.0 3.5 4.0 4.5
VGS – Gate-to-Source Voltage (V)
5.0
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