eGaN® FET DATASHEET
EPC2038 – Enhancement Mode Power Transistor
with Integrated Reverse Gate Clamp Diode
VDS , 100 V RDS(on) , 3300 mΩ ID , 0.5 A
D G
S
EPC2038
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority car...
