Schottky rectifier. STPS1045B-Y Datasheet

STPS1045B-Y rectifier. Datasheet pdf. Equivalent

STPS1045B-Y Datasheet
Recommendation STPS1045B-Y Datasheet
Part STPS1045B-Y
Description Automotive power Schottky rectifier
Feature STPS1045B-Y; STPS1045B-Y Automotive power Schottky rectifier Features ■ Negligible switching losses ■ Low forwar.
Manufacture STMicroelectronics
Datasheet
Download STPS1045B-Y Datasheet




STMicroelectronics STPS1045B-Y
STPS1045B-Y
Automotive power Schottky rectifier
Features
Negligible switching losses
Low forward voltage drop
Low capacitance
High reverse avalanche surge capability
Avalanche specification
AEC-Q101 qualified
Description
High voltage Schottky rectifier suited for switch
mode power supplies and other power converters.
Packaged in DPAK, this device is intended for use
in high frequency circuits where low switching
losses are required.
K
KA
A
DPAK
STPS1045BY
j
Table 1. Device summary
IF(AV)
VRRM
Tj
VF(max)
10 A
45 V
175 °C
0.57 V
May 2011
Doc ID 17265 Rev 1
1/7
www.st.com
7



STMicroelectronics STPS1045B-Y
Characteristics
1 Characteristics
STPS1045B-Y
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
VRRM Repetitive peak reverse voltage
45
IF(RMS)/pin Forward rms current
7
IF(AV) Average forward current
Tc = 150 °C δ = 0.5
10
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
75
IRRM Repetitive peak reverse current
tp = 2 µs, F= 1 kHz
1
PARM Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
4000
Tstg Storage temperature range
Tj Operating junction temperature range(1)
-65 to +175
-40 to +175
dV/dt Critical rate of rise of reverse voltage
10000
1. d----dP----T-t--o-j---t < R-----t--h----(-1--j-------a----) condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Symbol
Parameter
Value
Rth(j-c) Junction to case
3
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min. Typ. Max.
IR(1)
Reverse leakage
current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
-
-
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 10 A
IF = 20 A
-
-
-
-
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.015 IF2(RMS)
- 100
7 15
- 0.63
0.50 0.57
- 0.84
0.65 0.72
Unit
V
A
A
A
A
W
°C
°C
V/µs
Unit
°C/W
Unit
μA
mA
V
2/7 Doc ID 17265 Rev 1



STMicroelectronics STPS1045B-Y
STPS1045B-Y
Characteristics
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature ( δ = 0.5)
PF(AV)(W)
8
7
6
5
4
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ=1
IF(AV)(A)
12
10
8
6
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
3
4
2T
12
0
IF(AV)(A)
δ=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12
0
Rth(j-a)=70°C/W
Tamb(°C)
25 50 75 100 125 150 175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(25 °C)
1.2
1
0.1 0.8
0.01
0.6
0.4
0.001
tp(µs)
0.2
Tj(°C)
0
0.01
0.1
1
10
100
1000
25
50
75 100 125
150
Figure 5.
IM(A)
120
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values)
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
100 0.8
80
60
40
IM
20
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
TC=50°C
0.6 δ = 0.5
TC=100°C
TC=150°C
1E+0
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-4
Single pulse
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Doc ID 17265 Rev 1
3/7







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