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N-Channel MOSFET. CT3400-R3 Datasheet

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N-Channel MOSFET. CT3400-R3 Datasheet






CT3400-R3 MOSFET. Datasheet pdf. Equivalent






CT3400-R3 MOSFET. Datasheet pdf. Equivalent


CT3400-R3

Part

CT3400-R3

Description

N-Channel MOSFET



Feature


CT3400-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS 30 V • Drain-Source On-Resi stance RDS(ON) 23.5mΩ, at VGS= 10V, I DS= 6.0A RDS(ON) 26.5mΩ, at VGS= 4.5V , IDS= 5.0A ℃• Continuous Drain Cur rent at TA=25 ID = 5.8A • Advanced hi gh cell density Trench Technology • R oHS Compliance & Halogen Free Applicati ons • Power Management • LED Displ.
Manufacture

CT Micro

Datasheet
Download CT3400-R3 Datasheet


CT Micro CT3400-R3

CT3400-R3; ay • DC-DC System • LCD Panel Descr iption The CT3400-R3 uses high performa nce Trench Technology to provide excell ent RDS(ON) and low gate charge which i s suitable for most of the synchronous buck converter applications . Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprie tary & Confidential Page 1 Rev 6 Aug. 2015 CT3400-R3 N-Cha.


CT Micro CT3400-R3

nnel Enhancement MOSFET Absolute Maximu m Rating at 25oC Symbol Parameters V DS Drain-Source Voltage VGS Gate-Sourc e Voltage ℃ID Continuous Drain Curren t @TA=25 IDM Pulsed Drain Current ℃P D Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operatin g Junction Temperature Range Thermal C haracteristics Symbol Parameters RӨ JA Thermal Resistance .

Part

CT3400-R3

Description

N-Channel MOSFET



Feature


CT3400-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS 30 V • Drain-Source On-Resi stance RDS(ON) 23.5mΩ, at VGS= 10V, I DS= 6.0A RDS(ON) 26.5mΩ, at VGS= 4.5V , IDS= 5.0A ℃• Continuous Drain Cur rent at TA=25 ID = 5.8A • Advanced hi gh cell density Trench Technology • R oHS Compliance & Halogen Free Applicati ons • Power Management • LED Displ.
Manufacture

CT Micro

Datasheet
Download CT3400-R3 Datasheet




 CT3400-R3
CT3400-R3
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30 V
Drain-Source On-Resistance
RDS(ON) 23.5m, at VGS= 10V, IDS= 6.0A
RDS(ON) 26.5m, at VGS= 4.5V, IDS= 5.0A
Continuous Drain Current at TA=25 ID = 5.8A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
LED Display
DC-DC System
LCD Panel
Description
The CT3400-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 6
Aug. 2015




 CT3400-R3
CT3400-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
30
±12
5.8
15
1.4
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
175
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 6
Aug. 2015



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