CT3400-R3 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30 V Drain-Source On-Resistance
RDS(ON) 23.5mΩ, at VGS= 10V, IDS= 6.0A RDS(ON) 26.5mΩ, at VGS= 4.5V, IDS= 5.0A
℃ Continuous Drain Current at TA=25 ID = 5.8A
Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Applications
Power Management ...
