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N-Channel MOSFET. CT2306-R3 Datasheet

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N-Channel MOSFET. CT2306-R3 Datasheet






CT2306-R3 MOSFET. Datasheet pdf. Equivalent




CT2306-R3 MOSFET. Datasheet pdf. Equivalent





Part

CT2306-R3

Description

N-Channel MOSFET



Feature


CT2306-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS 30 V • Drain-Source On-Resi stance • RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A ℃• Continuous Drain Curren t at TA=25 ID = 4.7A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CT2306-R3 uses high performance.
Manufacture

CT Micro

Datasheet
Download CT2306-R3 Datasheet


CT Micro CT2306-R3

CT2306-R3; Trench Technology to provide excellent RDS(ON) and low gate charge which is su itable for most of the synchronous buck converter applications. Applications • Power Management • DC-DC Converte r • Load Switch Package Outline Sch ematic Drain Drain Gate Source Gat e Source CT Micro Proprietary & Confi dential Page 1 Rev 2 Jun, 2015 CT230 6-R3 N-Channel Enhanceme.


CT Micro CT2306-R3

nt MOSFET Absolute Maximum Rating at 25 oC Symbol Parameters VDS Drain-Sourc e Voltage VGS Gate-Source Voltage ℃I D Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Tempe rature Range TJ Operating Junction Tem perature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Re sistance Junction-Ambie.


CT Micro CT2306-R3

nt Test Conditions Test Conditions 30 ±20 4.7 20 1.3 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 °C °C Min Typ Max Units Notes -- 125 -- oC /W 1,4 C T Micro Proprietary & Confidential Pag e 2 Rev 2 Jun, 2015 CT2306-R3 N-Chann el Enhancement MOSFET Electrical Chara cteristics TA = 25°C (unless otherwise specified) Static Characteristics Sy mbol Parameters BVDS.

Part

CT2306-R3

Description

N-Channel MOSFET



Feature


CT2306-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS 30 V • Drain-Source On-Resi stance • RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A ℃• Continuous Drain Curren t at TA=25 ID = 4.7A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CT2306-R3 uses high performance.
Manufacture

CT Micro

Datasheet
Download CT2306-R3 Datasheet




 CT2306-R3
CT2306-R3
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30 V
Drain-Source On-Resistance
RDS(ON) 25m, at VGS= 10V, ID=4.0A
RDS(ON) 36m, at VGS= 4.5V, ID= 3.5A
Continuous Drain Current at TA=25 ID = 4.7A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CT2306-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications.
Applications
Power Management
DC-DC Converter
Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015




 CT2306-R3
CT2306-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient
Test Conditions
Test Conditions
30
±20
4.7
20
1.3
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 125 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Jun, 2015




 CT2306-R3
CT2306-R3
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Test Conditions
VGS= 0V, ID= 250µA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
Min Typ Max Units Notes
30 - - V
--
1 µA
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(th)
Gate-Source Threshold Voltage
Test Conditions
VGS = 10V, ID = 4.0A
VGS = 4.5V, ID = 3.5A
VGS = VDS, ID =250µA
Min Typ Max Units Notes
- 25 45 m
3
- 36 50 m
1.0 --- 3.0
V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VGS =0V,
VDS =15V
f=1MHz
Min Typ Max Units Notes
- 382 -
- 65 - pF
- 16 -
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR Rise Time
TD(OFF)
Turn-Off Delay Time
TF Fall Time
QG Total Gate Charge
QGS Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Test Conditions
VDS = 15V ,
VGS = 10V,
RG = 3,
ID =3.4A
VDS = 15V ,
VGS = 15V,
ID =3.4A
Min Typ Max Units Notes
-9-
- 15 -
Fig
ns
- 32 -
8&9
-3-
- 6.4 -
Fig
- 3 - nC
6&7
- 2.5 -
CT Micro
Proprietary & Confidential
Page 3
Rev 2
Jun, 2015



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