N-Channel MOSFET. CT2306-R3 Datasheet

CT2306-R3 MOSFET. Datasheet pdf. Equivalent

Part CT2306-R3
Description N-Channel MOSFET
Feature CT2306-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 30 V • Drain-.
Manufacture CT Micro
Total Page 10 Pages
Datasheet
Download CT2306-R3 Datasheet



CT2306-R3
CT2306-R3
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30 V
Drain-Source On-Resistance
RDS(ON) 25m, at VGS= 10V, ID=4.0A
RDS(ON) 36m, at VGS= 4.5V, ID= 3.5A
Continuous Drain Current at TA=25 ID = 4.7A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CT2306-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications.
Applications
Power Management
DC-DC Converter
Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015



CT2306-R3
CT2306-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient
Test Conditions
Test Conditions
30
±20
4.7
20
1.3
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 125 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Jun, 2015





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