CT2306-R3 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30 V Drain-Source On-Resistance
RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A
℃ Continuous Drain Current at TA=25 ID = 4.7A
Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CT2306-R3 uses high p...
