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CT8124-T52

CT Micro

N-Channel MOSFET

Description
CT8124-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS = 20V  Drain-Source On-Resistance RDS(ON) 23m, at VGS= 4.5V, ID= 5.0A RDS(ON) 27m, at VGS= 2.5V, ID= 3.5A RDS(ON) 34m, at VGS= 1.8V, ID= 2.8A  Continuous Drain Current at TC=25℃ID = 9.0A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free ...


CT Micro

CT8124-T52

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