N-Channel MOSFET. CT8124-T52 Datasheet

CT8124-T52 MOSFET. Datasheet pdf. Equivalent

Part CT8124-T52
Description N-Channel MOSFET
Feature CT8124-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS = 20V  Drai.
Manufacture CT Micro
Total Page 11 Pages
Datasheet
Download CT8124-T52 Datasheet



CT8124-T52
CT8124-T52
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS = 20V
Drain-Source On-Resistance
RDS(ON) 23m, at VGS= 4.5V, ID= 5.0A
RDS(ON) 27m, at VGS= 2.5V, ID= 3.5A
RDS(ON) 34m, at VGS= 1.8V, ID= 2.8A
Continuous Drain Current at TC=25ID = 9.0A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CT8124 T52 uses high performance Trench
Technology to provide excellent RDS(ON)and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Applications
Notebook
High side switching
Power Management
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Aug, 2015



CT8124-T52
CT8124-T52
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Steady State
Test Conditions
20
±8
9
30
2.5
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- -- 4.5 oC /W 1,3
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Aug, 2015





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