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N-Channel MOSFET. CTH10003NS-T52 Datasheet

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N-Channel MOSFET. CTH10003NS-T52 Datasheet






CTH10003NS-T52 MOSFET. Datasheet pdf. Equivalent






CTH10003NS-T52 MOSFET. Datasheet pdf. Equivalent


CTH10003NS-T52

Part

CTH10003NS-T52

Description

N-Channel MOSFET



Feature


CTH10003NS-T52 N-Channel Enhancement MOS FET Features Drain-Source Breakdown V oltage VDSS 30V Drain-Source On-Resist ance RDS(ON) 2.6m, at VGS= 10V, ID= 20A RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A Continuous Drain Current at TC=25 ID =100A Advanced high cell density Trench Technology RoHS Compliance & Ha logen Free Description The CTH1003NS-T 52 is the N-Channel logi.
Manufacture

CT Micro

Datasheet
Download CTH10003NS-T52 Datasheet


CT Micro CTH10003NS-T52

CTH10003NS-T52; c enhancement mode power field effect tr ansistors are produced using high cell density DMOS trench technology. This hi gh density process is especially tailor ed to minimize on-state resistance App lications DC/DC converters Motor Driv ers Power Management Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Con fidential Page 1 .


CT Micro CTH10003NS-T52

Rev 3 Jun, 2015 CTH10003NS-T52 N-Chann el Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VD S Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @ TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage Temperature Range TJ Operati ng Junction Temperature Range Thermal Characteristics Symbo.

Part

CTH10003NS-T52

Description

N-Channel MOSFET



Feature


CTH10003NS-T52 N-Channel Enhancement MOS FET Features Drain-Source Breakdown V oltage VDSS 30V Drain-Source On-Resist ance RDS(ON) 2.6m, at VGS= 10V, ID= 20A RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A Continuous Drain Current at TC=25 ID =100A Advanced high cell density Trench Technology RoHS Compliance & Ha logen Free Description The CTH1003NS-T 52 is the N-Channel logi.
Manufacture

CT Micro

Datasheet
Download CTH10003NS-T52 Datasheet




 CTH10003NS-T52
CTH10003NS-T52
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30V
Drain-Source On-Resistance
RDS(ON) 2.6m, at VGS= 10V, ID= 20A
RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A
Continuous Drain Current at TC=25ID =100A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTH1003NS-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance
Applications
DC/DC converters
Motor Drivers
Power Management
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015




 CTH10003NS-T52
CTH10003NS-T52
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Test Conditions
30
±20
100
400
54
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- -- 2.3 oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Jun, 2015



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