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CTH10003NS-T52

N-Channel MOSFET

Description

CTH10003NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30V  Drain-Source On-Resistance RDS(ON) 2.6m, at VGS= 10V, ID= 20A RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A  Continuous Drain Current at TC=25℃ID =100A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH1003NS-T52 is the...

CT Micro

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CTH10003NS-T52 N-Channel MOSFET - CT Micro

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