Photodarlington Optocoupler. H11B1 Datasheet

H11B1 Optocoupler. Datasheet pdf. Equivalent

Part H11B1
Description Photodarlington Optocoupler
Feature 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Opt.
Manufacture CT Micro
Datasheet
Download H11B1 Datasheet



H11B1
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Features
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
Temperature range - 55 °C to 100 °C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC GB4943.1, GB8898
IEC60065, IEC60950
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Description
The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1,
H11B2, H11B3, H11B255, and TIL113 series
consists of a photodarlington transistor optically
coupled to a gallium arsenide Infrared-emitting diode
in a 4-lead DIP package with bending option.
Package Outline
Schematic
Note: Different bending options available. See package
dimension.
CT Microelectronics
Proprietary & Confidential
Page 1
Rev 1
Apr, 2014



H11B1
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF
IF(TRANS)
Forward current
Peak transient current (≤1μs P.W,300pps)
VR Reverse voltage
PD Power dissipation
Detector
PD Power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
Ratings
5000
-55 ~ +100
-55 ~ +150
260
60
1
6
120
150
55
55
7
7
Units
VRMS
0C
0C
0C
Notes
mA
A
V
mW
mW
V
V
V
V
CT Microelectronics
Proprietary & Confidential
Page 2
Rev 1
Apr, 2014





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