GaAs FET. TIM1011-4UL Datasheet

TIM1011-4UL FET. Datasheet pdf. Equivalent

Part TIM1011-4UL
Description MICROWAVE POWER GaAs FET
Feature FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ・HIGH GA.
Manufacture Toshiba
Datasheet
Download TIM1011-4UL Datasheet



TIM1011-4UL
FEATURES
BROAD BAND INTERNALLY MATCHED FET
HIGH POWER
P1dB= 36.5dBm at 10.7GHz to 11.7GHz
HIGH GAIN
G1dB= 9.5dB at 10.7GHz to 11.7GHz
LOW INTERMODULATION DISTOTION
IM3=-45dBc at Pout= 24.0dBm
Single Carrier Level
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1011-4UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB
G1dB
IDS1
VDS= 10V
IDSset= 1.0A
f=10.7 to 11.7 GHz
UNIT
dBm
dB
A
Gain Flatness
G
dB
Power Added Efficiency
add
%
3rd Order Intermodulation
Distortion
Drain Current
IM3
IDS2
Two Tone Test
dBc
Po= 24.0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 150
MIN.
35.5
8.5
-42
TYP. MAX.
36.5
9.5
1.1
1.6
±0.8
36
-45
1.1
1.6
60
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
CONDITIONS
VDS= 3V
IDS= 1.2A
VDS= 3V
IDS= 40mA
VDS= 3V
VGS= 0V
VGSO IGS= -40A
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
1.2
V
-0.5 -2.0 -4.5
A
2.2
V
-5
°C/W
3.8
4.4
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as TISS) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
incorporating this product.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 1_20170920_No1271
Page: 1 / 2



TIM1011-4UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaAs FET
TIM1011-4UL
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
RATING
15
-5
3.3
34.1
175
-65 to +175
PACKAGE OUTLINE (2-9D1B)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved.1_20170920_No1271
Page: 2 / 2





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