GaN HEMT. TGI1314-50LA Datasheet

TGI1314-50LA HEMT. Datasheet pdf. Equivalent

Part TGI1314-50LA
Description MICROWAVE POWER GaN HEMT
Feature MICROWAVE POWER GaN HEMT TGI1314-50LA FEATURES ・BROAD BAND INTERNALLY MATCHED HEMT ・HIGH POWER Pout=.
Manufacture Toshiba
Datasheet
Download TGI1314-50LA Datasheet



TGI1314-50LA
MICROWAVE POWER GaN HEMT
TGI1314-50LA
FEATURES
BROAD BAND INTERNALLY MATCHED HEMT
HIGH POWER
Pout= 47.0dBm at Pin= 42.0dBm
HIGH GAIN
GL= 8.0dB at 13.75GHz to 14.5GHz
LOW INTERMODULATION DISTORTION
IM3(Min.)= -25dBc at Pout= 40.0dBm (Single Carrier Level)
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
Output Power
Drain Current
Power Added Efficiency
Pout
IDS1
PAE
VDS= 24V
IDSset= 2.0A
f = 13.75 to 14.5GHz
@Pin= 42dBm
Linear Gain
Gain Flatness
GL
@Pin= 20dBm
G
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
IM3
IM3-2
IDS2
Tch
Two-tone Test
Po= 40.0dBm
(Single Carrier Level)
f= 5MHz (IM3)
f= 150MHz (IM3-2)
(VDS X IDS + Pin – Pout)
X Rth(c-c)
Recommended Gate Resistance(Rg): 13.3
UNIT
dBm
A
%
dB
dB
dBc
dBc
A
°C
MIN.
46.0
7.0
TYP.
47.0
5.0
29
8.0
MAX.
6.0
±0.8
-25
-27
-25
-27
3.5
4.5
130 160
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
CONDITIONS
VDS= 5V
IDS= 5.0A
VDS= 5V
IDS= 23mA
VDS= 5V
VGS= 0V
VGSO IGS= -10mA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
4.5
V
-1.0 -4.0 -6.0
A
18
V
-10
°C/W
1.4
1.6
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
incorporating this product.
© 2018 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20180223_No1360 Page: 1 / 9



TGI1314-50LA
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaN HEMT
TGI1314-50LA
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
RATING
50
-10
15.0
140
250
-65 to +175
PACKAGE OUTLINE (7-AA07A)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
© 2018 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20180223_No1360 Page: 2 / 9





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)