MICROWAVE POWER GaN HEMT
TGI1314-50LA
FEATURES
・BROAD BAND INTERNALLY MATCHED HEMT ・HIGH POWER
Pout= 47.0dBm at Pin= 42.0dBm
・HIGH GAIN
GL= 8.0dB at 13.75GHz to 14.5GHz
・LOW INTERMODULATION DISTORTION
IM3(Min.)= -25dBc at Pout= 40.0dBm (Single Carrier Level)
・HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CO...