FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN
G1dB= 7.5dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM8596-4
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SY...
