| DatasheetsPDF.com |
EPC2040 Datasheet, Equivalent, Power Transistor.Enhancement Mode Power Transistor Enhancement Mode Power Transistor |
| Part | EPC2040 |
|---|---|
| Description | Enhancement Mode Power Transistor |
| Feature | eGaN® FET DATASHEET
EPC2040 – Enhanc ement Mode Power Transistor
VDS , 15 V RDS(on) , 30 mΩ ID , 3. 4 A D G S EP C2040 EFFICIENT POWER CONVERSION HAL G allium Nitride’s exceptionally high e lectron mobility and low temperature co efficient allows very low RDS(on), whil e its lateral device structure and majo rity carrier diode provide exceptionall y low QG and zero QRR. The end result i s a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maxim um Ratings PARAMETER VALUE UNIT Drai n-to-Source Voltage . |
| Manufacture | EPC |
| Datasheet |
| Part | EPC2040 |
|---|---|
| Description | Enhancement Mode Power Transistor |
| Feature | eGaN® FET DATASHEET
EPC2040 – Enhanc ement Mode Power Transistor
VDS , 15 V RDS(on) , 30 mΩ ID , 3. 4 A D G S EP C2040 EFFICIENT POWER CONVERSION HAL G allium Nitride’s exceptionally high e lectron mobility and low temperature co efficient allows very low RDS(on), whil e its lateral device structure and majo rity carrier diode provide exceptionall y low QG and zero QRR. The end result i s a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maxim um Ratings PARAMETER VALUE UNIT Drai n-to-Source Voltage . |
| Manufacture | EPC |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |