isc Silicon NPN Darlingtion Power Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 750 (Min) @ IC =10 Adc ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)=100V(Min) ·Complement to type 2N6287 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Intended for general purpo...