DatasheetsPDF.com

2N6933

Part Number	2N6933
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High Swi...
Datasheet	2N6933 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for off-line power supplies，switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base voltage 8 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 23 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Tempera...

Similar Datasheet

2N690 Thyristors - RCA
2N690 25 and 35 Amp RMS SCRs - International Rectifier
2N690 SCR Thyristor - Multicomp
2N690 SILICON CONTROLLED RECTIFIER - Digitron Semiconductors
2N690 SILICON CONTROLLED RECTIFIER - Central Semiconductor
2N690 Power Triode Thyristors - Microsemi
2N6901 N-CHANNEL LOGIC LEVEL MOSFET - Microsemi
2N6901 TRANSISTOR - DSI
2N6901-M TRANSISTOR - DSI
2N6905 (2N6905 - 2N6907) N-Channel JFET - Siliconix

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)