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2N6286

Part Number	2N6286
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- h...
Datasheet	2N6286 PDF File

Overview

isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -10 Adc ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) ·Complement to type 2N6283 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5.
0 V IC Collector Current -Continuous -20 A ICP Coll...

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