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2SD288

INCHANGE
Part Number 2SD288
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 5, 2020
Detailed Description isc Silicon NPN Power Transistor 2SD288 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min) ·Collec...
Datasheet PDF File 2SD288 PDF File

2SD288
2SD288

Overview
isc Silicon NPN Power Transistor 2SD288 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min) ·Collector Power Dissipation- : PC= 25W(Max)@ TC= 25℃ APPLICATIONS ·Designed for power regulator, low frequency high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.
0 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power...


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