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2SD1046

Part Number	2SD1046
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1046 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(...
Datasheet	2SD1046 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1046 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB816 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=2...

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