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2SD1667

NPN Transistor

Description

isc Silicon NPN Power Transistor 2SD1667 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max.)@ IC= 3A ·Complement to Type 2SB1134 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers,high-speed inverters,and o...

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