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BDT61CF

Part Number	BDT61CF
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 7, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61CF DESCRIPTION ·High DC Current Gain ·Low Satu...
Datasheet	BDT61CF PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61CF DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BDT60CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ ...

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