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BDT61A

Part Number	BDT61A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Colle...
Datasheet	BDT61A PDF File

Overview

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C ·Complement to Type BDT60/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT61 60 VCBO Collector-Base Voltage BDT61A 80 V BDT61B 100 BDT61C 120 BDT61 60 VCEO Collector-Emitter Voltage BDT61A 80 V BDT61...

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