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BFR35AP

NPN Transistor

Description

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 12.5 dB TYP. @VCE= 8 V,IC = 15 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low distortion broadband amplifiers and oscillators. ABSOLUTE MAXIM...

INCHANGE

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