isc Silicon NPN Power Transistor
BUY20
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 120V(Min.) ·Excellent Safe Operating Area ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching-control amplifiers, power
gates,switching regulators, converters,...
