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MJ10005P

Part Number	MJ10005P
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Very high DC current gain ·Monolithic darlington transistor wit...
Datasheet	MJ10005P PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power,fast switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation Max.
Junction Temperature 500 V 400 V 8 V 20 A 30 A 2.
5 A 125 W 150 ℃ Tstg Storage Temperature Range ...

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