INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJ11033
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -120V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to the NPN MJ11032
APPLICATIONS ·Designed for use as output devices in complementary
general pu...
