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MJE702T
PNP Transistor
Description
isc Silicon
PNP
Darlington Power
Transistor
INCHANGE Semiconductor MJE702T DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -80 V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5A = 100(Min) @ IC= -4A ·Complement to Type MJE802T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for genera...
INCHANGE
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