PNP Transistor. MJE702T Datasheet

MJE702T Transistor. Datasheet pdf. Equivalent

Part MJE702T
Description PNP Transistor
Feature isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJE702T DESCRIPTION ·Collector–.
Manufacture INCHANGE
Datasheet
Download MJE702T Datasheet

MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN COMPLEMENT MJE702T Datasheet
isc Silicon PNP Darlington Power Transistor INCHANGE Semico MJE702T Datasheet
Recommendation Recommendation Datasheet MJE702T Datasheet





MJE702T
isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
MJE702T
DESCRIPTION
·Collector–Emitter Breakdown Voltage
: V(BR)CEO = -80 V
·DC Current Gain
: hFE = 750(Min) @ IC= -1.5A
= 100(Min) @ IC= -4A
·Complement to Type MJE802T
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
IB
Base Current
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
-0.1
A
50
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.5 /W
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MJE702T
isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
MJE702T
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA
VBE(on)-1 Base-Emitter On Voltage
IC= -1.5A; VCE= -3V
VBE(on)-2 Base-Emitter On Voltage
IC= -4A; VCE= -3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -80V; IB= 0
VCB= -80V; IE= 0
VCB= -80V; IE= 0;TC= 100
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1.5 A ; VCE= -3V
hFE-2
DC Current Gain
IC= -4A ; VCE= -3V
MIN MAX UNIT
-80
V
-2.5
V
-3.0
V
-2.5
V
-3.0
V
-0.1
mA
-0.1
-0.5
mA
-2.0
mA
750
100
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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