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MJE15034
NPN Transistor
Description
isc Silicon
NPN
Power
Transistor
MJE15034 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=350V ·Good Linearity of hFE ·Complement to Type MJE15035 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ...
INCHANGE
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