Schottky rectifier. STPS30M60ST Datasheet

STPS30M60ST rectifier. Datasheet pdf. Equivalent

Part STPS30M60ST
Description Power Schottky rectifier
Feature STPS30M60S Power Schottky rectifier Features ■ High current capability ■ Avalanche rated ■ Low forw.
Manufacture STMicroelectronics
Datasheet
Download STPS30M60ST Datasheet

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STPS30M60ST
STPS30M60S
Power Schottky rectifier
Features
High current capability
Avalanche rated
Low forward voltage drop
High frequency operation
Description
The STPS30M60S is a single Schottky diode,
suited for high frequency switch mode power
supply.
Packaged in TO-220AB, I2PAK and D2PAK, this
device is intended to be used in notebook, game
station and desktop adapters, providing in these
applications a good efficiency at both low and
high load.
Table 1. Device summary
Symbol
IF(AV)
VRRM
VF (typ)
Tj (max)
Value
30 A
60 V
0.380 V
150 °C
A
A
K
A
K
A
I2PAK
STPS30M60SR
K
K
K
A
A
D2PAK
STPS30M60SG-TR
A
K
A
TO-220AB
STPS30M60ST
Figure 1. Electrical characteristics(a)
V
I
"Forward"
I
2 x IO
X
VRRM
VAR VR
IF
IO
IR
X
V
"Reverse"
VTo VF(Io) VF VF(2xIo)
IAR
October 2011
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 12. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
Doc ID 022049 Rev 1
1/9
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STPS30M60ST
Characteristics
1
Characteristics
STPS30M60S
Table 2.
Absolute ratings (limiting values with terminals 1 and 3 short circuited at
25 °C, unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
60
V
IF(RMS) Forward rms current
90
A
IF(AV) Average forward current, δ = 0.5
Tc = 130 °C Per package
30
A
IFSM Surge non repetitive forward current
PARM(1) Repetitive peak avalanche power
tp = 10 ms sine-wave
Tj = 25 °C, tp = 1 µs
600
A
34400
W
VARM(2)
Maximum repetitive peak
avalanche voltage
tp < 1 µs, Tj < 150 °C, IAR < 129 A
80
V
VASM(2)
Maximum single-pulse
peak avalanche voltage
tp < 1 µs, Tj < 150 °C, IAR < 129 A
80
V
Tstg Storage temperature range
Tj Maximum operating junction temperature(3)
-65 to +175 °C
150
°C
1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
2. See Figure 12
3.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
0.9
°C/W
Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage
current
Tj = 25 °C
Tj = 125 °C
VR = VRM
-
-
VF(2)
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 15 A
IF = 30 A
-
-
-
-
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.395 x IF(AV) + 0.0047 x IF2(RMS)
35
165
µA
25
100
mA
0.475 0.515
0.380 0.425
V
0.540 0.590
0.470 0.535
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Doc ID 022049 Rev 1





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