Schottky rectifier. STPS40M60CR Datasheet

STPS40M60CR rectifier. Datasheet pdf. Equivalent

Part STPS40M60CR
Description power Schottky rectifier
Feature STPS40M60C High efficiency 60 V power Schottky rectifier Features ■ High current capability ■ Avala.
Manufacture STMicroelectronics
Datasheet
Download STPS40M60CR Datasheet

STPS40M60C High efficiency 60 V power Schottky rectifier Fe STPS40M60CR Datasheet
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STPS40M60CR
STPS40M60C
High efficiency 60 V power Schottky rectifier
Features
High current capability
Avalanche rated
Low forward voltage drop
Low leakage current
High frequency operation
Description
This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB, I2PAK and D2PAK, this
device is particularly suited for use in notebook,
game station and desktop adapters, providing
these applications with a good efficiency at both
low and high load.
Table 1. Device summary
Symbol
IF(AV)
VRRM
Tj (max)
VF (typ)
Value
2 x 20 A
60 V
150 °C
385 mV
A1
A2
K
A2
K
A1
I2PAK
STPS40M60CR
K
K
K
A2
A1
D2PAK
STPS40M60CG-TR
A2
K
A1
TO-220AB
STPS40M60CT
Figure 1. Electrical characteristics(a)
V
I
"Forward"
I
2 x IO
X
VRRM
VAR VR
IF
IO
IR
X
V
"Reverse"
VTo VF(Io) VF VF(2xIo)
IAR
May 2011
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 13. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
Doc ID 018813 Rev 1
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STPS40M60CR
Characteristics
1
Characteristics
STPS40M60C
Table 2.
Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless
otherwise specified)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
60
V
IF(RMS) Forward rms current
30
A
IF(AV) Average forward current, δ = 0.5
Tc = 130 °C Per diode
20
A
Tc = 120 °C Per device
40
IFSM Surge non repetitive forward current
PARM(1) Repetitive peak avalanche power
tp = 10 ms sinusoidal
Tj = 25 °C, tp = 1 µs
220
A
23000
W
VARM(2)
Maximum repetitive peak
avalanche voltage
tp < 1 µs, Tj < 150 °C, IAR < 86.3 A
80
V
Tstg Storage temperature range
Tj Maximum operating junction temperature(3)
-65 to +175 °C
150
°C
1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
2. See Figure 13
3.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
Rth(c) Coupling
per diode
total
1.40
°C/W
0.95
0.50
°C/W
When the two diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
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Doc ID 018813 Rev 1





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