DatasheetsPDF.com

2SB532

Part Number	2SB532
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High Power D...
Datasheet	2SB532 PDF File

Overview

isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -5 A 60 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SB532 isc website：www.
iscsemi.
com 1 isc & iscsemi is registe...

Similar Datasheet

2SB502 PNP Transistor - INCHANGE
2SB502A SILICON PNP TRANSISTOR - Toshiba
2SB503 PNP Transistor - INCHANGE
2SB503A SILICON PNP TRANSISTOR - Toshiba
2SB506 PNP Transistor - INCHANGE
2SB506 SILICON POWER TRANSISTOR - SavantIC
2SB507 PNP Transistor - INCHANGE
2SB507 Silicon PNP Power Transistors - SavantIC
2SB507 PNP Epitaxial Silicon Transistor - GME
2SB507 PNP Transistor - DC COMPONENTS

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)