DatasheetsPDF.com

2SB552

PNP Transistor

Description

isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD552 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC c...

INCHANGE

Download 2SB552 Datasheet

Similar Datasheet

2SB502 PNP Transistor - INCHANGE
2SB502A SILICON PNP TRANSISTOR - Toshiba
2SB503 PNP Transistor - INCHANGE
2SB503A SILICON PNP TRANSISTOR - Toshiba
2SB506 PNP Transistor - INCHANGE
2SB506 SILICON POWER TRANSISTOR - SavantIC
2SB507 PNP Transistor - INCHANGE
2SB507 Silicon PNP Power Transistors - SavantIC
2SB507 PNP Epitaxial Silicon Transistor - GME
2SB507 PNP Transistor - DC COMPONENTS

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)