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2SB566

Part Number	2SB566
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SB566 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -1.0(V)(Max)@IC= -2A ...
Datasheet	2SB566 PDF File

Overview

isc Silicon PNP Power Transistor 2SB566 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -1.
0(V)(Max)@IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Complement to Type 2SD476 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A...

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