isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
...
