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2SD1148

Part Number	2SD1148
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearit...
Datasheet	2SD1148 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2SB863 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature ...

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