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BD751B

INCHANGE

NPN Transistor


Description
isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C ·High Power Dissipation ·Complement to Type BD750B/750C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and high power amplifier applications. ...



INCHANGE

BD751B

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