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2SB1381 Datasheet, Equivalent, PNP Transistor.PNP Transistor PNP Transistor |
| Part | 2SB1381 |
|---|---|
| Description | PNP Transistor |
| Feature | isc Silicon PNP Darlington Power Transistor 2SB1381 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -2.5A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2.5A, IB= -5mA) ·Complement to Type 2SD2079 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector. |
| Manufacture | INCHANGE |
| Datasheet |
| Part | 2SB1381 |
|---|---|
| Description | PNP Transistor |
| Feature | isc Silicon PNP Darlington Power Transistor 2SB1381 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -2.5A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2.5A, IB= -5mA) ·Complement to Type 2SD2079 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector. |
| Manufacture | INCHANGE |
| Datasheet |
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