isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2140 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high power amplifications. ·Optimum for the output stage of a HiFi audio amplifier
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