isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain ·Built-in resistor between base and emitter ·Complement to Type 2SD2398 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power switching applications.
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