DatasheetsPDF.com

NPN Transistor. 2SC3451 Datasheet

DatasheetsPDF.com

NPN Transistor. 2SC3451 Datasheet






2SC3451 Transistor. Datasheet pdf. Equivalent




2SC3451 Transistor. Datasheet pdf. Equivalent





Part

2SC3451

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Collector-Emitter Breakdow n Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Op eration ·Minimum Lot-to-Lot variations for robust device performance and reli able operation APPLICATIONS ·Designed for switching regulator and general pur pose applications. ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL .
Manufacture

INCHANGE

Datasheet
Download 2SC3451 Datasheet


INCHANGE 2SC3451

2SC3451; PARAMETER VALUE UNIT VCBO Collector- Base Voltage 800 V VCEO Collector-E mitter Voltage 500 V VEBO Emitter-B ase voltage 7 V IC Collector Curren t-Continuous 15 A ICM Collector Cur rent-Peak 25 A IB Base Current-Cont inuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 100 W 150 ℃ Tstg Storage T emperature Range -55~.


INCHANGE 2SC3451

150 ℃ 2SC3451 isc website:www.isc semi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Trans istor ELECTRICAL CHARACTERISTICS TC=25 ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collec tor-Base Breakdown Voltage IC= 1mA; IE = 0 V(BR)CEO Collector-Emitter Breakdo wn Voltage IC= 5mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vol.


INCHANGE 2SC3451

tage IE= 1m A; IC= 0 VCE(sat) Collecto r-Emitter Saturation Voltage IC= 6A; IB = 1.2A VBE(sat) Base-Emitter Saturatio n Voltage IC= 6A; IB= 1.2A ICBO Coll ector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1.2 A; VCE= 5V hFE-2 DC Current Gain IC= 6A; VCE= 5V fT Current-Gain—Bandwi dth Product IC= 1.2.

Part

2SC3451

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Collector-Emitter Breakdow n Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Op eration ·Minimum Lot-to-Lot variations for robust device performance and reli able operation APPLICATIONS ·Designed for switching regulator and general pur pose applications. ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL .
Manufacture

INCHANGE

Datasheet
Download 2SC3451 Datasheet




 2SC3451
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min)
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
4
A
100
W
150
Tstg
Storage Temperature Range
-55~150
2SC3451
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3451
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.2A; VCE= 5V
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1.2A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 7A, IB1= 1.2A; IB2= -2.4A
RL= 28.6Ω; VCC= 200V
2SC3451
MIN TYP. MAX UNIT
800
V
500
V
7
V
1.0
V
1.5
V
10 μA
10 μA
15
50
8
18
MHz
160
pF
0.5 μs
3.0 μs
0.3 μs
hFE-1 Classifications
L
M
N
15-30 20-40 30-50
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark







Recommended third-party 2SC3451 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)