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2SC3505

NPN Transistor

Description

isc Silicon NPN Power Transistor 2SC3505 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 700V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifier...

INCHANGE

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