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2SD1115

INCHANGE

NPN Transistor


Description
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB...



INCHANGE

2SD1115

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