isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB860 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier TV vertical
deflection output applications
ABSOLUT...
