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NPN Transistor. 2SD1649 Datasheet

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NPN Transistor. 2SD1649 Datasheet






2SD1649 Transistor. Datasheet pdf. Equivalent




2SD1649 Transistor. Datasheet pdf. Equivalent





Part

2SD1649

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·H igh Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Designed for col or TV horizontal deflection output appl icaitions. ABSOLUTE MAXIMUM RATINGS(Ta =25℃) SYMBOL PARAMETER.
Manufacture

INCHANGE

Datasheet
Download 2SD1649 Datasheet


INCHANGE 2SD1649

2SD1649; VALUE UNIT VCBO Collector-Base Volt age 1500 V VCEO Collector-Emitter V oltage 800 V VEBO Emitter-Base Volt age 6 V IC Collector Current- Conti nuous 2.5 A ICP Collector Current-P eak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temp erature Range -55~150 ℃ 2SD1649 i sc website:www.iscsemi.c.


INCHANGE 2SD1649

om 1 isc & iscsemi is registered tradem ark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unl ess otherwise specified SYMBOL PARAME TER CONDITIONS V(BR)CEO Collector-Emi tter Breakdown Voltage IC= 10mA; RBE= V(BR)CBO Collector-Base Breakdown V oltage IC= 5mA; IE= 0 V(BR)EBO Emitte r-Base Breakdown Voltage IE= 200mA; IC = 0 VCE(sat) Collecto.


INCHANGE 2SD1649

r-Emitter Saturation Voltage IC= 2A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Colle ctor Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V VECF C-E Diode Forward Voltag e tf Fall Time IF= 2.5A IC= 2A, IB1= 0.6A; IB2= 1.2A; RL= 100Ω; VCC= 200V 2SD1649 MIN TYP. .

Part

2SD1649

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·H igh Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Designed for col or TV horizontal deflection output appl icaitions. ABSOLUTE MAXIMUM RATINGS(Ta =25℃) SYMBOL PARAMETER.
Manufacture

INCHANGE

Datasheet
Download 2SD1649 Datasheet




 2SD1649
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for color TV horizontal deflection output
applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
2.5
A
ICP
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
10
A
50
W
150
Tstg
Storage Temperature Range
-55~150
2SD1649
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SD1649
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 2.5A
IC= 2A, IB1= 0.6A; IB2= 1.2A;
RL= 100Ω; VCC= 200V
2SD1649
MIN TYP. MAX UNIT
800
V
1500
V
7
V
8.0
V
1.5
V
10 μA
40
130 mA
8
2.0
V
0.4 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark







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