DatasheetsPDF.com
2SD2079
NPN Transistor
Description
isc Silicon
NPN
Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 6mA) ·Complement to Type 2SB1381 ·Minimum Lot-to-Lot variations for robust device performance and reliable operati...
INCHANGE
Download 2SD2079 Datasheet
Similar Datasheet
2SD200
NPN Transistor
- INCHANGE
2SD200
SILICON POWER TRANSISTOR
- SavantIC
2SD2000
Silicon NPN Transistor
- Panasonic Semiconductor
2SD2000
SILICON POWER TRANSISTOR
- SavantIC
2SD2000
NPN Transistor
- INCHANGE
2SD2001
NPN Transistor
- INCHANGE
2SD2005
NPN Transistor
- ROHM
2SD2006
NPN Transistor
- Rohm
2SD2008
1.2W PACKAGE POWER TRANSISTOR
- Rohm
2SD2009
NPN Transistor
- ROHM
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)